FC4B21300L 锂离子二次电池保护电路用MOSFET

技术参数
项目性能特性
Catalog PartsFC4B2130
SeriesMOSFET (CSP)
SpiceN/A
TypeNchx2
VSS / VDS (V)12
VGS (V)8
IS (A) /ID (A)1.5
Isp (A) / Idp (A)15
PD (W)0.32
PackageALGA004-W-0606-RA
Package Length (mm)0.6
Package Width (mm)0.6
Package Thickness (mm)0.1
RSS(on)@VGS=4.5V [Min] (mΩ)55
RSS(on)@VGS=4.5V [Typ] (mΩ)70
RSS(on)@VGS=4.5V [Max] (mΩ)95
RSS(on)@VGS=3.8V [Min] (mΩ)60
RSS(on)@VGS=3.8V [Typ] (mΩ)80
RSS(on)@VGS=3.8V [Max] (mΩ)110
RSS(on)@VGS=3.1V [Min] (mΩ)65
RSS(on)@VGS=3.1V [Typ] (mΩ)90
RSS(on)@VGS=3.1V [Max] (mΩ)150
RSS(on)@VGS=2.5V [Min] (mΩ)70
RSS(on)@VGS=2.5V [Typ] (mΩ)115
RSS(on)@VGS=2.5V [Max] (mΩ)225
RDS(on)@VGS=10V [Min] (mΩ)-
RDS(on)@VGS=10V [Typ] (mΩ)-
RDS(on)@VGS=10V [Max] (mΩ)-
RDS(on)@VGS=4.5V [Min] (mΩ)-
RDS(on)@VGS=4.5V [Typ] (mΩ)-
RDS(on)@VGS=4.5V [Max] (mΩ)-
RDS(on)@VGS=3.1V [Min] (mΩ)-
RDS(on)@VGS=3.1V [Typ] (mΩ)-
RDS(on)@VGS=3.1V [Max] (mΩ)-
RDS(on)@VGS=2.5V [Min] (mΩ)-
RDS(on)@VGS=2.5V [Typ] (mΩ)-
RDS(on)@VGS=2.5V [Max] (mΩ)-
ISSS / IDSS [Max] (µA)1
IGSS@VGS=16V [Max] (µA)-
IGSS@VGS=12V [Max] (µA)-
IGSS@VGS=8V [Max] (µA)10
IGSS@VGS=5V [Max] (µA)1
Vth [Min] (V)0.35
Vth [Typ] (V)0.9
Vth [Max] (V)1.4
Ciss [Typ] (pF)115
Coss [Typ] (pF)25
Crss [Typ] (pF)18
td(on) [Typ] (µs)0.1
tr [Typ] (µs)0.2
td(off) [Typ] (µs)0.27
tf [Typ] (µs)0.22
Qg [Typ] (nC)1.7
Qgs [Typ] (nC)0.5
Qgd [Typ] (nC)0.45
VF(s-s) / VSD [Typ] (V)-
VF(s-s) / VSD [Max] (V)-
Tch (°C)150
Tstg (°C)-55 to +150
Rth °C/W)390
RoHS compliant *1Compliant
REACH compliant *2SVHC not included
Halogen FreeYes
文档资料
DataSheet FC4B21300L
Technical information terms of use SK8603300L
Tape and reel information FK4B01110L
Recommended Soldering Conditions FK4B01120L
Letter for the Certificate of Compliance to EU RoHS Directive FC4B21300L
Report of Confirmation of EU REACH SVHC FC4B21300L