FC4B22180L 锂离子二次电池保护电路用MOSFET

技术参数
项目性能特性
Catalog PartsFC4B2218
SeriesMOSFET (CSP)
SpiceN/A
TypeNchx2
VSS / VDS (V)20
VGS (V)8
IS (A) /ID (A)5
Isp (A) / Idp (A)50
PD (W)0.4
PackageMLGA004-W-1717-RB
Package Length (mm)1.74
Package Width (mm)1.74
Package Thickness (mm)0.11
RSS(on)@VGS=4.5V [Min] (mΩ)7
RSS(on)@VGS=4.5V [Typ] (mΩ)9.4
RSS(on)@VGS=4.5V [Max] (mΩ)11.9
RSS(on)@VGS=3.8V [Min] (mΩ)7.3
RSS(on)@VGS=3.8V [Typ] (mΩ)10
RSS(on)@VGS=3.8V [Max] (mΩ)12.9
RSS(on)@VGS=3.1V [Min] (mΩ)8.1
RSS(on)@VGS=3.1V [Typ] (mΩ)11.1
RSS(on)@VGS=3.1V [Max] (mΩ)15.8
RSS(on)@VGS=2.5V [Min] (mΩ)8.6
RSS(on)@VGS=2.5V [Typ] (mΩ)13.4
RSS(on)@VGS=2.5V [Max] (mΩ)22.6
RDS(on)@VGS=10V [Min] (mΩ)-
RDS(on)@VGS=10V [Typ] (mΩ)-
RDS(on)@VGS=10V [Max] (mΩ)-
RDS(on)@VGS=4.5V [Min] (mΩ)-
RDS(on)@VGS=4.5V [Typ] (mΩ)-
RDS(on)@VGS=4.5V [Max] (mΩ)-
RDS(on)@VGS=3.1V [Min] (mΩ)-
RDS(on)@VGS=3.1V [Typ] (mΩ)-
RDS(on)@VGS=3.1V [Max] (mΩ)-
RDS(on)@VGS=2.5V [Min] (mΩ)-
RDS(on)@VGS=2.5V [Typ] (mΩ)-
RDS(on)@VGS=2.5V [Max] (mΩ)-
ISSS / IDSS [Max] (µA)1
IGSS@VGS=16V [Max] (µA)-
IGSS@VGS=12V [Max] (µA)-
IGSS@VGS=8V [Max] (µA)10
IGSS@VGS=5V [Max] (µA)1
Vth [Min] (V)0.35
Vth [Typ] (V)0.9
Vth [Max] (V)1.4
Ciss [Typ] (pF)2440
Coss [Typ] (pF)200
Crss [Typ] (pF)160
td(on) [Typ] (µs)0.9
tr [Typ] (µs)1.6
td(off) [Typ] (µs)5
tf [Typ] (µs)2.4
Qg [Typ] (nC)23
Qgs [Typ] (nC)6
Qgd [Typ] (nC)5
VF(s-s) / VSD [Typ] (V)0.8
VF(s-s) / VSD [Max] (V)1.2
Tch (°C)150
Tstg (°C)-55 to +150
Rth °C/W)312
RoHS compliant *1Compliant
REACH compliant *2SVHC not included
Halogen FreeYes
文档资料
DataSheet FC4B22180L
Technical information terms of use SK8603300L
Tape and reel information FC4B22180L
Recommended Soldering Conditions FK4B01120L
Letter for the Certificate of Compliance to EU RoHS Directive FC4B22180L
Report of Confirmation of EU REACH SVHC FC4B22180L