30V Nch+Nch Middle Power MOSFET HP8S36

HP8S36 is low on-resistance MOSFET for switching application.

型号Status封装包装数量最小独立包装数量包装形态RoHS
HP8S36TB供应中HSOP8(Dual)25002500TapingYes

HP8S36 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeHSOP8D(5x6)
Package Size[mm]5.0x6.0(t=1.0)
Number of terminal9
PolarityNch+Nch
Drain-Source Voltage VDSS[V]30
Drain Current ID[A]27.0
RDS(on)[Ω] VGS=4.5V (Typ.)0.0091
RDS(on)[Ω] VGS=10V (Typ.)0.0067
RDS(on)[Ω] VGS=Drive (Typ.)0.0091
Total gate charge Qg[nC]4.8
Power Dissipation (PD)[W]22.0
Drive Voltage[V]4.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
技术资料下载
产品特点
  • Low on - resistance
  • Pb-free lead plating; RoHS compliant
  • Halogen Free
  • Built in Schottky-barrier diode(Tr2)
引脚配置图
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Taping Specifications VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
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