-20V Pch+Pch 中功率MOSFET QH8JA1

QH8JA1是将2个低导通电阻的中功率MOSFET复合的、小型表面安装封装的MOSFET。

型号Status封装包装数量最小独立包装数量包装形态RoHS
QH8JA1TCR供应中TSMT830003000TapingYes

QH8JA1 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeTSMT8
Package Size[mm]3.0x2.8(t=0.8)
Number of terminal8
PolarityPch+Pch
Drain-Source Voltage VDSS[V]-20
Drain Current ID[A]-5.0
RDS(on)[Ω] VGS=1.8V (Typ.)0.049
RDS(on)[Ω] VGS=2.5V (Typ.)0.035
RDS(on)[Ω] VGS=4.5V (Typ.)0.028
RDS(on)[Ω] VGS=Drive (Typ.)0.049
Total gate charge Qg[nC]10.2
Power Dissipation (PD)[W]1.5
Drive Voltage[V]-1.8
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
技术资料下载
产品特点
  • Low on - resistance.
  • Small surface mount package (TSMT8).
  • -1.8V Drive.
  • Pb-free lead plating; RoHS compliant
引脚配置图
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Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
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