-12V Pch+Pch 中功率MOSFET QS8J13

QS8J13是低导通电阻的中功率MOSFET。采用小型表面安装封装，有助于节省空间。

型号Status封装包装数量最小独立包装数量包装形态RoHS
QS8J13TR供应中TSMT830003000TapingYes

QS8J13 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeTSMT8
Package Size[mm]3.0x2.8(t=0.8)
Number of terminal8
PolarityPch+Pch
Drain-Source Voltage VDSS[V]-12
Drain Current ID[A]-5.5
RDS(on)[Ω] VGS=1.5V (Typ.)0.029
RDS(on)[Ω] VGS=2.5V (Typ.)0.019
RDS(on)[Ω] VGS=4.5V (Typ.)0.015
RDS(on)[Ω] VGS=Drive (Typ.)0.029
Total gate charge Qg[nC]60.0
Power Dissipation (PD)[W]1.5
Drive Voltage[V]-1.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
应用领域
  • POS (Point of Sales System)
技术资料下载
引脚配置图
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Thermal Model (lib) QS8J13
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Reliability Information RQ1E070RP
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
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