10V驱动型 Nch MOSFET R6047ENZ1

场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”，为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容，可满足多样的市场需求。

型号Status封装包装数量最小独立包装数量包装形态RoHS
R6047ENZ1C9供应中TO-247450450BulkYes

R6047ENZ1 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeTO-247
Package Size[mm]21.1x15.9(t5.0)
Number of terminal3
PolarityNch
Drain-Source Voltage VDSS[V]600
Drain Current ID[A]47.0
RDS(on)[Ω] VGS=10V (Typ.)0.066
RDS(on)[Ω] VGS=Drive (Typ.)0.066
Total gate charge Qg[nC]145.0
Power Dissipation (PD)[W]120.0
Drive Voltage[V]10.0
Mounting StyleLeaded type
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
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