10V Drive Nch MOSFET RCX200N20

电界効果晶体管的MOSFET。提供通过采用细微流程的「超低阻值的设备」而在广泛领域得以应用的功率MOSFET，并且结合用途，以多样的小型高功率复合型的产品线对应多种市场需求。

型号Status封装包装数量最小独立包装数量包装形态RoHS
RCX200N20供应中TO-220FM500500BulkYes

RCX200N20 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeTO-220FM
Package Size[mm]15.1x10.1 (t=4.6)
Number of terminal3
PolarityNch
Drain-Source Voltage VDSS[V]200
Drain Current ID[A]20.0
RDS(on)[Ω] VGS=10V (Typ.)0.1
RDS(on)[Ω] VGS=Drive (Typ.)0.1
Total gate charge Qg[nC]40.0
Power Dissipation (PD)[W]40.0
Drive Voltage[V]10.0
Mounting StyleLeaded type
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
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