10V Drive Nch MOSFET RDD022N60

电界効果晶体管的MOSFET。提供通过采用细微流程的「超低阻值的设备」而在广泛领域得以应用的功率MOSFET,并且结合用途,以多样的小型高功率复合型的产品线对应多种市场需求。

型号Status封装包装数量最小独立包装数量包装形态RoHS
RDD022N60TL供应中CPT325002500TapingYes

RDD022N60 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeTO-252(DPAK)
JEITA PackageSC-63
Package Size[mm]6.5x9.5(t=2.3)
Number of terminal3
PolarityNch
Drain-Source Voltage VDSS[V]600
Drain Current ID[A]2.0
RDS(on)[Ω] VGS=10V (Typ.)5.5
RDS(on)[Ω] VGS=Drive (Typ.)5.5
Total gate charge Qg[nC]7.0
Power Dissipation (PD)[W]20.0
Drive Voltage[V]10.0
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
应用领域
  • Portable Data Terminal
  • Digital Multimeter: Handy Type
  • 智能电表
  • Network Attached Storage
  • DVR/DVS
  • PPC (Plain Paper Copier)
  • 太阳能发电逆变器
  • Electric Bike
  • X-ray Inspection Machine for Security
  • 监控摄像机
  • MFP (多功能打印机)
  • Intercom / Baby Monitor
  • Fingerprint Authentication Device
  • LED 照明
  • Display for EMS
  • 监控摄像机(IP网络)
技术资料下载
引脚配置图
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RDD022N60 RDD022N60
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Spice Model (lib) RDD022N60
Thermal Model (lib) RDD022N60
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Reliability Information RSD221N06
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series ZDX100N60