Nch 30V 5.5A 功率MOSFET RQ6E055BN

RQ6E055BN是内置栅极保护二极管的功率MOSFET。

型号Status封装包装数量最小独立包装数量包装形态RoHS
RQ6E055BNTCR供应中TSMT630003000TapingYes

RQ6E055BN 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeSOT-457T
JEITA PackageSC-95
Package Size[mm]2.9x2.8(t=1.0max.)
Number of terminal6
PolarityNch
Drain-Source Voltage VDSS[V]30
Drain Current ID[A]5.5
RDS(on)[Ω] VGS=4.5V (Typ.)0.03
RDS(on)[Ω] VGS=10V (Typ.)0.019
RDS(on)[Ω] VGS=Drive (Typ.)0.03
Total gate charge Qg[nC]4.4
Power Dissipation (PD)[W]1.25
Drive Voltage[V]4.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
技术资料下载
产品特点
  • Low on - resistance.
  • Built-in G-S Protection Diode.
  • Small Surface Mount Package(TSMT6).
  • Pb-free lead plating; RoHS compliant.
引脚配置图
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Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
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