Nch 30V 8.5A Middle Power MOSFET RQ6E085BN

RQ6E085BN is low on-resistance and small surface mount package MOSFET for switching application.

型号Status封装包装数量最小独立包装数量包装形态RoHS
RQ6E085BNTCR供应中TSMT630003000TapingYes

RQ6E085BN 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeSOT-457T
JEITA PackageSC-95
Package Size[mm]2.9x2.8(t=1.0max.)
Number of terminal6
PolarityNch
Drain-Source Voltage VDSS[V]30
Drain Current ID[A]8.5
RDS(on)[Ω] VGS=4.5V (Typ.)0.0139
RDS(on)[Ω] VGS=10V (Typ.)0.0111
RDS(on)[Ω] VGS=Drive (Typ.)0.0139
Total gate charge Qg[nC]16.6
Power Dissipation (PD)[W]1.25
Drive Voltage[V]4.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
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引脚配置图
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Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
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