N-channel Silicon Carbide Power MOSFET SCT3030KL
SCT3030KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| 型号 | Status | 封装 | 包装数量 | 最小独立包装数量 | 包装形态 | RoHS |
|---|
|
| SCT3030KLC11 | 供应中 | TO-247N | 450 | 30 | Tube | Yes |
SCT3030KL 数据手册 Data Sheet
技术特性| Drain-source Voltage[V] | 1200 | | Drain-source On-state Resistance(Typ.)[mΩ] | 30 | | Drain Current[A] | 72.0 | | Total Power Dissipation[W] | 339 | | Junction Temperature(Max.)[°C] | 175 | | Storage Temperature (Min.)[°C] | -55 | | Storage Temperature (Max.)[°C] | 175 |
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