Complex Transistor(BIP+Diode) US5L12

在超小型封装中内藏2个晶体管。适用于从差动增幅回路到高频水晶振动器,起动器等各种用途。

型号Status封装包装数量最小独立包装数量包装形态RoHS
US5L12TR供应中TUMT530003000TapingYes

US5L12 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeSOT-353T
JEITA PackageSC-113CA
Package Size[mm]2.0x2.1(t=0.85Max.)
Number of terminal5
PolarityNPN+Di
Collector-Emitter voltage VCEO1[V]30.0
Collector current(continuous) IC1[A]1.0
Collector Power dissipation PC[W]0.4
hFE270 to 680
hFE (Min.)270
hFE (Max.)680
hFE (Diode)25
Reverse voltage VR (Diode) [V]20.0
Forward Current IF (Diode) [A]0.7
Forward Current Surge Peak IFSM (Diode) [A]3.0
Mounting StyleSurface mount
Equivalent (Single Part)2SB1689 / RB461F
Storage Temperature (Min.)[°C]-40
Storage Temperature (Max.)[°C]125
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引脚配置图
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US5L12 US5L12
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Spice Model (lib) US5L12
Thermal Model (lib) US5L12
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Reliability Information US5L12
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series US5L12