-20V Pch+Pch 功率MOSFET UT6J3

UT6J3是低导通电阻的功率MOSFET。采用小型表面安装封装，有助于节省空间。

型号Status封装包装数量最小独立包装数量包装形态RoHS
UT6J3TCR供应中HUML2020L8(Dual)30003000TapingYes

UT6J3 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeDFN2020-8D
Package Size[mm]2.0x2.0(t=0.6)
Number of terminal8
PolarityPch+Pch
Drain-Source Voltage VDSS[V]-20
Drain Current ID[A]-3.0
RDS(on)[Ω] VGS=1.5V (Typ.)0.13
RDS(on)[Ω] VGS=2.5V (Typ.)0.065
RDS(on)[Ω] VGS=4.5V (Typ.)0.06
RDS(on)[Ω] VGS=Drive (Typ.)0.13
Total gate charge Qg[nC]8.5
Power Dissipation (PD)[W]2.0
Drive Voltage[V]-1.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
技术资料下载
产品特点
  • Low on-resistance.
  • Small Surface Mount Package.
  • Pb-free lead plating; RoHS compliant.
  • Halogen Free.
引脚配置图
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UT6J3 UT6J3
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Taping Specifications VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series UT6J3
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