MJD117：COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
The devices are manufactured in planar technology with \"base island\" layout and monolithic Darlington configuration.
Key Features
- Good hFE
linearity
- Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
- High fT
frequency
产品规格
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| MJD117T4 | DPAK | Tape And Reel | 0.25 | 500 | NEC | EAR99 | CHINA |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| MJD117T4 | DPAK | Industrial | Ecopack2 (**) | |
