MJD127:COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

The devices are manufactured in planar technology with \"base island\" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Key Features

  • Low collector-emitter saturation voltage
  • Integrated antiparallel collector-emitter diode
产品规格
DescriptionVersionSize
DS0777: Complementary power Darlington transistors11.2576 KB
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
MJD127T4DPAKTape And Reel0.259500NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
MJD127T4DPAKIndustrialEcopack2 (**)md_dp-wspc-to-wspc-252-wspc-dpak_tldp-wspc-bd01t62.pdf
md_dp-wspc-to-wspc-252-wspc-dpak_tldp-wspc-bd01t62.xml
Complementary power Darlington transistors MJD122
md_dp-wspc-to-wspc-252-wspc-dpak_tldp-wspc-bd01t62.pdf MJD127
md_dp-wspc-to-wspc-252-wspc-dpak_tldp-wspc-bd01t62.xml MJD127