STAC4932B：1200W Pulse - 100V HF/VHF DMOS TRANSISTOR in STAC package
The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. The STAC4932B benefits from the latest generation of efficient, patent-pending STAC® package technology.
Key Features
- Excellent thermal stability
- Common source push-pull configuration
- POUT
= 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHz
- Pulse conditions: 1 msec - 10%
- In compliance with the 2002/95/EC European directive
- ST air-cavity STAC®
packaging technology
产品规格
应用手册
HW Model & CAD Libraries
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
解决方案评估工具
| 型号 | 制造商 | Description |
|---|
| STEVAL-IMR002V1 | | 2 kW/100 V RF demonstration board for 3 T MRI based on the STAC4932B |
样片和购买
| 型号 | Quantity | Unit Price (US$)
* | Package | Packing Type | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STAC4932B | 1000 | 67.9 | STAC244B | Loose Piece | NEC | EAR99 | MOROCCO |
质量和可靠性
