STB13007DT4：High voltage fast-switching NPN power transistor

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure to enhance switching speeds.

Key Features

  • Fully characterized at 125 ˚C
  • Very high switching speed
  • In compliance with the 2002/93/EC European Directive
  • Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range
  • Integrated free-wheeling diode
  • High voltage capability
  • Minimum lot-to-lot spread for reliable operation
  • Large RBSOA
  • Low spread of dynamic parameters
产品规格
DescriptionVersionSize
DS4802: High voltage fast-switching NPN power transistor2.3228 KB
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STB13007DT4D2PAKTape And Reel0.454500NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STB13007DT4D2PAKIndustrialEcopack2md_d2-wspc-d2pak_tld2-wspc-bv48s62.pdf
md_d2-wspc-d2pak_tld2-wspc-bv48s62.xml
High voltage fast-switching NPN power transistor STB13007DT4
md_d2-wspc-d2pak_tld2-wspc-bv48s62.pdf STB13007DT4
md_d2-wspc-d2pak_tld2-wspc-bv48s62.xml STB13007DT4
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