STD19NF20:N-channel 200 V, 0.11 Ohm typ., 15 A MESH OVERLAY Power MOSFET in DPAK package

These Power MOSFETs are designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.

Key Features

  • Extremely high dv/dt capability
  • Gate charge minimized
  • Very low intrinsic capacitances
产品规格
DescriptionVersionSize
DS4935: N-channel 200 V, 0.11 Ω typ., 15 A MESH OVERLAY™ Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 packages6.01 MB
应用手册
DescriptionVersionSize
AN1703: Guidelines for using ST's MOSFET smd Packages1.3776 KB
AN3267: Impact of power MOSFET VGS on buck converter performance1.21 MB
AN4191: Power MOSFET: Rg impact on applications1.11 MB
AN4390: ST’s MOSFET technologies for uninterruptible power supplies1.11 MB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
用户手册
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STD19NF20DPAKTape And Reel--NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STD19NF20DPAKIndustrialEcopack2
N-channel 200 V, 0.11 Ω typ., 15 A MESH OVERLAY™ Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 packages STD19NF20
Guidelines for using ST's MOSFET smd Packages STD26P3LLH6
Impact of power MOSFET VGS on buck converter performance STL8DN6LF3
Power MOSFET: Rg impact on applications STL8DN6LF3
ST’s MOSFET technologies for uninterruptible power supplies STL8DN6LF3
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Very low drop voltage regulators with inhibit KFXX