STFH12N120K5：N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220FP wide creepage package
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology
based on an innovative proprietary vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate charge for applications requiring superior
power density and high efficiency.
The TO-220FP wide creepage package provides increased surface insulation for Power
MOSFETs to prevent failure due to arcing, which can occur in polluted environments.
Key Features
- Industry's lowest RDS(on)
* area
- Industry's best figure of merit (FoM)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
- Wide creepage distance of 4.25 mm between the pins
产品规格
应用手册
Technical Notes & Articles
用户手册
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STFH12N120K5 | TO-220FP wide creepage | Tube | 5.4 | 1000 | NEC | EAR99 | - |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STFH12N120K5 | TO-220FP wide creepage | Industrial | Ecopack2 | |
