STGB19NC60HD：19 A, 600 V, very fast IGBT with Ultrafast diode
These devices are ultrafast IGBT. They utilize the
advanced Power MESH™ process resulting in an
excellent trade-off between switching
performance and low on-state behavior.
Key Features
- Low on-voltage drop (VCE(sat)
)
- Very soft Ultrafast recovery anti-parallel diode
产品规格
应用手册
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STGB19NC60HD | - | - | - | - | - | - | - |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STGB19NC60HD | - | Industrial | - | |
