STGW10M65DF2：Trench gate field-stop IGBT M series, 650 V 10 A low loss
This device is an IGBT developed using an advanced proprietary trench gate field-stop
structure. The device is part of the M series of IGBTs, which represent an optimum
compromise in performance to maximize the efficiency of inverter systems where low-loss
and short-circuit capability are essential. Furthermore, a positive VCE(sat)
temperature coefficient and tight parameter distribution result in safer paralleling
operation.
Key Features
- 6 µs of short-circuit withstand time
- VCE(sat)
= 1.55 V (typ.) @ IC
= 10 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
产品规格
应用手册
HW Model & CAD Libraries
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STGW10M65DF2 | TO-247 | Tube | - | - | NEC | EAR99 | - |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STGW10M65DF2 | TO-247 | Industrial | Ecopack2 | |
