STH310N10F7-2：N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Key Features
- Among the lowest RDS(on)
on the market
- Excellent figure of merit (FoM)
- Low Crss
/Ciss
ratio for EMI immunity
- High avalanche ruggedness
产品规格
应用手册
用户手册
HW Model & CAD Libraries
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STH310N10F7-2 | H2PAK-2 | Tape And Reel | 3.8 | 1000 | NEC | EAR99 | CHINA |
质量和可靠性
