STL110N10F7：N-channel 100 V, 0.005 Ohm typ., 107 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
This N-channel Power MOSFET utilizes the STripFET™ H7 technology with a trench gate structure combined with extremely low on-resistance. The device also offers ultra-low capacitances for higher switching frequency operations.
Key Features
- Among the lowest RDS(on)
on the market
- Excellent figure of merit (FoM)
- Low Crss
/Ciss ratio for EMI immunity
- High avalanche ruggedness
产品规格
应用手册
用户手册
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STL110N10F7 | PowerFLAT 5x6 | Tape And Reel | 2.3 | 1000 | NEC | EAR99 | CHINA |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STL110N10F7 | PowerFLAT 5x6 | Industrial | Ecopack2 | |
