STP105N3LL：N-channel 30 V, 2.7 mOhm typ., 150 A STripFET H6 Power MOSFET in a TO-220 package

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
产品规格
DescriptionVersionSize
DS9382: N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ H6 Power MOSFET in a TO-220 package3.0813 KB
应用手册
DescriptionVersionSize
AN1506: A motor drives system for wheelchair applications1.2139 KB
AN3267: Impact of power MOSFET VGS on buck converter performance1.21 MB
AN4191: Power MOSFET: Rg impact on applications1.11 MB
AN4192: Power MOSFETs: best choice guide for VRM application1.04 MB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
用户手册
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STP105N3LLTO-220ABTube--NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STP105N3LLTO-220ABIndustrialEcopack2
N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ H6 Power MOSFET in a TO-220 package STP105N3LL
A motor drives system for wheelchair applications STD18NF03L
Impact of power MOSFET VGS on buck converter performance STL8DN6LF3
Power MOSFET: Rg impact on applications STL8DN6LF3
Power MOSFETs: best choice guide for VRM application STD18NF03L
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Very low drop voltage regulators with inhibit KFXX
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