STPSC1206：600 V power Schottky silicon carbide diode
These diodes are manufactured using silicon carbide substrate. This wide bandgap material supports the manufacture of a Schottky diode structure with a high voltage rating. Such diodes exhibit no or negligible recovery characteristics.
The recovery characteristics are independent of the temperature.
Using these diodes will significantly reduce the switching power losses of the associated MOSFET, and thus increase the efficiency of the overall application. These diodes will then outperform the power factor correction circuit operating in hard switching conditions.
Key Features
- No reverse recovery
- Dedicated to PFC boost diode
- Switching behavior independent of temperature
产品规格
应用手册
Technical Notes & Articles
HW Model & CAD Libraries
简报
宣传册
选型指南
手册
会议文章
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-DIODE-FINDER | ST | Diode product finder application for Android and iOS |
样片和购买
| 型号 | Unit Price (US$)
* | Quantity | Package | Packing Type | Junction Temperature (°C) (max) | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STPSC1206D | 2.401 | 100 | TO-220AC | Tube | 175 | NEC | EAR99 | CHINA |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STPSC1206D | TO-220AC | Industrial | Ecopack2 | |
