STPSC6TH13TI：Dual 650 V power Schottky silicon carbide diode in series
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Key Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Suited for specific bridge-less topologies
- High forward surge capability
- Insulated package:
- Capacitance: 7 pF
- Insulated voltage: 2500 V rms
产品规格
应用手册
Technical Notes & Articles
HW Model & CAD Libraries
简报
宣传册
选型指南
手册
会议文章
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-DIODE-FINDER | ST | Diode product finder application for Android and iOS |
样片和购买
| 型号 | Unit Price (US$)
* | Quantity | Package | Packing Type | Junction Temperature (°C) (max) | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STPSC6TH13TI | 2.301 | 100 | TO-220AB Ins | Tube | 175 | NEC | EAR99 | CHINA |
质量和可靠性
