2SK3438 Power MOSFET (N-ch 500V《VDSS≤700V) _ BDTIC 中国领先电子元器件代理商

Toshiba Package Name	TFP
Pins	4

Characteristics	Symbol	Rating	Unit
Drain current	I_D	10	A
Power Dissipation	P_D	80	W
Drain-Source voltage	V_DSS	600	V
Drain-Source voltage	V_DSS	600	V

项目	符号	条件	数值	单位
Input capacitance (Typ.)	C_iss	-	1200	pF
Total gate charge (Typ.)	Q_g	-	28	nC
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=10V	1	Ω

相关技术数据	Construction and Characteristics: Power MOSFET Application Notes[Oct,2004]	(PDF: 108KB)
相关技术数据	Maximum Ratings: Power MOSFET Application Notes[Oct,2004]	(PDF: 191KB)
相关技术数据	Electrical Characteristics: Power MOSFET Application Notes[Oct,2004]	(PDF: 182KB)
相关技术数据	Application Precautions: Power MOSFET Application Notes[Oct,2004]	(PDF: 303KB)
相关技术数据	Heat Sink Design: Power MOSFET Application Notes[Oct,2004]	(PDF: 237KB)
Catalog	MOSFETs[Mar,2016]	(PDF: 2526KB)
Catalog	Part Number List: MOSFETs[Mar,2016]	(PDF: 1295KB)