2SK3669 Power MOSFET (N-ch single 60V《VDSS≤150V) _ BDTIC 中国领先电子元器件代理商

Characteristics	Symbol	Rating	Unit
Drain current	I_D	10	A
Power Dissipation	P_D	20	W
Drain-Source voltage	V_DSS	100	V
Drain-Source voltage	V_DSS	100	V

项目	符号	条件	数值	单位
Total gate charge (Typ.)	Q_g	-	8.0	nC
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=10V	0.125	Ω

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