TSFF6410 High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

技术特性
  • Package type: leaded
  • Package form: T-1¾
  • Dimensions (in mm): Ø 5
Datasheet
3D Models (*.zip)
TSFF6410 81126
Opto 3D Models 81321
TSFF6410 High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero 81126