BPW16N Silicon NPN Phototransistor
技术特性
- Package type: leaded
- Package form: T-¾
- Dimensions (in mm): Ø 1.8
Datasheet
Constructions
- Component Construction - Component Construction
Glossary
- Symbols and Terminology - Symbols and Terminology
- Type Designation Code - Type Designation Code
Packaging Information
- Packaging and Order Information - Packaging and Order Information
Product Literature
- Selector Guide - IR Emitters, Photo Detectors, and Optical Sensors
Quality Info
- Assembly Instructions - Assembly Instructions
- Reliability and Statistics Glossary - Reliability and Statistics Glossary
Reference Data
- Physics and Technology - Physics and Technology
Technical Papers
- Measurement Techniques - Measurement Techniques
- BPW16N 81515
- Component Construction 81579
- Symbols IRDC 81288
- Type Designation Code 81579
- Packaging Information 30205
- Selector Guide 81579
- Ordering Information 33008
- Reliability and Statistics Glossary 81579
- Physics and Technology 81579
- Measurement Techniques 81579
- BPW16N Silicon NPN Phototransistor 81515
