TSHG5510 High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
技术特性
- Package type: leaded
- Package form: T-1¾
- Dimensions (in mm): Ø 5
Datasheet
3D Models (*.zip)
- Opto 3D Models - Opto 3D Models
Product Literature
- Product Sheet - 830 nm, 850 nm, and 870 nm High Intensity Infrared Emitters
- TSHG5510 81887
