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VISHAY 威世
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二极管和整流器
> V10150S-E3, VF10150S-E3, VB10150S-E3, VI10150S-E3
V10150S-E3, VF10150S-E3, VB10150S-E3, VI10150S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A
技术特性
Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Datasheet
V10150S-E3, VF10150S-E3, VB10150S-E3, VI10150S-E3
Application Notes
Application Note
- Design Guidelines for Schottky Rectifiers
Application Note
- Fundamentals of Rectifiers
Application Note
- High Speed Data Line Protection - Low Current Bridges Rectifiers Lend Themselves to Data Line Protection
Application Note
- Physical Explanation
Application Note
- Power Factor Correction with Ultrafast Diodes
Application Note
- Rectifiers for Power-Factor-Correction (PFC)
Application Note
- SUPERRECTIFIER Design Brings New Level of Reliability to Surface Mount Components
Application Note
- Using Rectifiers in Voltage Multiplier Circuits
General Information
Featured Product - TMBS®
- Industry’s First Commercial TMBS® - Trench MOS Barrier Schottky Rectifier Series
Markings
Diodes Group Body Marking
- Marking
Packaging Information
Packaging Information
- Packaging Information
V10150S-E3, VF10150S-E3, VB10150S-E3, VI10150S-E3
89058
Application Note
88755
Application Note
88755
Application Note
88755
Application Note
88755
Application Note
88755
Application Note
88755
Application Note
88755
Featured Product - TMBS®
89058
Diodes Group Body Marking
89174
Packaging Information
30205
V10150S-E3, VF10150S-E3, VB10150S-E3, VI10150S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF
89058
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