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VISHAY 威世
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二极管和整流器
> V10150C-E3, VF10150C-E3, VB10150C-E3, VI10150C-E3
V10150C-E3, VF10150C-E3, VB10150C-E3, VI10150C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
技术特性
Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Datasheet
V10150C-E3, VF10150C-E3, VB10150C-E3, VI10150C-E3
Application Notes
Application Note
- Design Guidelines for Schottky Rectifiers
Application Note
- Fundamentals of Rectifiers
Application Note
- High Speed Data Line Protection - Low Current Bridges Rectifiers Lend Themselves to Data Line Protection
Application Note
- Physical Explanation
Application Note
- Power Factor Correction with Ultrafast Diodes
Application Note
- Rectifiers for Power-Factor-Correction (PFC)
Application Note
- SUPERRECTIFIER Design Brings New Level of Reliability to Surface Mount Components
Application Note
- Using Rectifiers in Voltage Multiplier Circuits
Markings
Diodes Group Body Marking
- Marking
Packaging Information
Packaging Information
- Packaging Information
V10150C-E3, VF10150C-E3, VB10150C-E3, VI10150C-E3
89068
Application Note
88755
Application Note
88755
Application Note
88755
Application Note
88755
Application Note
88755
Application Note
88755
Application Note
88755
Diodes Group Body Marking
89174
Packaging Information
30205
V10150C-E3, VF10150C-E3, VB10150C-E3, VI10150C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
89068
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