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IRFIB6N60A, SiHFIB6N60A Power MOSFET

技术特性

• Low gate charge Qg results in simple drive requirement
• Improved gate, avalanche and dynamic dV/dt ruggedness
• Fully characterized capacitance and avalanche voltage and current

Datasheet

• IRFIB6N60A, SiHFIB6N60A

Application Notes

• Device Application Note AN1005 - Power MOSFET Avalanche Design Guidelines

General Information

• General Information - Useful Web Links

RC Thermal Models

• IRFIB6N60A_RC, SiHFIB6N60A_RC - R-C Thermal Model Parameters

Reliability Data

• Package Reliability - Environmental and Package Testing Data for TO-220 FullPAK
• Silicon Technology Reliability - N-Channel Accelerated Operating Life Test Result