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VS-GT120DA65U Insulated Gate Bipolar Transistor (Trench IGBT), 650 V, 120 A

技术特性

• Trench IGBT technology with positive temperature coefficient
• Square RBSOA
• FRED Pt® antiparallel diodes with ultrasoft reverse recovery

Datasheet

• VS-GT120DA65U

Application Notes

• Application Note - Mounting Instructions for SOT-227 Modules

Package Drawings

• Outline Dimensions - SOT-227 Generation II

Packaging Information

• Packaging Information - SOT-227 Generation II