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VS-GP250SA60S Insulated Gate Bipolar Transistor Trench PT IGBT, 650 V, 120 A Proprietary Vishay IGBT Silicon “L Series”

技术特性

• Standard speed Trench PT IGBT
• Fully isolated package
• Very low internal inductance (≤ 5 nH typical)

Datasheet

• VS-GP250SA60S

Application Notes

• Application Note - How to Design an Rg Resistor for a Vishay Trench PT IGBT
• Application Note - Mounting Instructions for SOT-227 Modules

Package Drawings

• Outline Dimensions - SOT-227 Generation II

Packaging Information

• Packaging Information - SOT-227 Generation II

Product Literature

• Miscellaneous - IGBT Modules (600 V, 650 V and 1200 V, 50 A to 250 A) in SOT-227 Package
• Product Sheet - IGBT Power Modules (VS-GP100TS60SFPbF, VS-GP250SA60S, VS-GP300TD60S, and VS-GP400TD60S) for TIG Welding Machines