• 简体中文
• English

ADG636 1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch

The ADG636 is a monolithic device, comprising two indepen-dently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions. Ultralow charge injection. QINJ: ±1.5 pC typical over the full signal range Leakage current <0.25 nA maximum at 85°C Dual ±2.7 V to ±5 V or single +2.7 V to +5.5 V supply Automotive temperature range: −40°C to +125°C Small 14-lead TSSOP package

The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7 V to +5.5 V.

This switch offers ultralow charge injection of ±1.5 pC over the entire signal range and leakage current of 10 pA typical at 25°C. In addition, it offers on resistance of 85 Ω typical, which is matched to within 2 Ω between channels. The ADG636 also has low power dissipation yet is capable of high switching speeds.

The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package.

Product Highlights

• Ultralow charge injection. QINJ: ±1.5 pC typical over the full signal range
• Leakage current <0.25 nA maximum at 85°C
• Dual ±2.7 V to ±5 V or single +2.7 V to +5.5 V supply
• Automotive temperature range: −40°C to +125°C
• Small 14-lead TSSOP package

Applications

• Automatic test equipment
• Data acquisition systems
• Battery-powered instruments
• Communication systems
• Sample-and-hold systems
• Remote-powered equipment
• Audio and video signal routing
• Relay replacement
• Avionics

Data Sheets

Order Information

Reference Materials

• Product Selection Guide：Switches and Multiplexers Product Selection Guide
• Technical Articles：CMOS Switches Offer High Performance in Low Power, Wideband Applications