HMC-ALH102-DIE Wideband Low Noise Amplifier Chip, 2 - 20 GHz

The HMC-ALH102 is a GaAs MMIC HEMT Low Noise Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 11.6 dB of gain at 10 GHz, <3.5 dB noise figure and +10 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +2V supply voltage. The HMC-ALH102 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size.

Applications

Wideband Communications Receivers
Surveillance Systems
Point-to-Point Radios
Point-to-Multi-Point Radios
Military & Space
Test Instrumentation

Features and Benefits

Noise Figure: <2.5 dB

Gain: 11.6 dB @ 10 GHz

P1dB Output Power: +10 dBm

Supply Voltage: +2V @ 55 mA

Die Size: 3.0 x 1.435 x 0.1 mm

Amplifiers

RF Amplifiers

S-Parameters

HMC-ALH102 S-Parameter .ZIP

Data Sheets

Document	note
HMC-ALH102 Data Sheet	PDF 541.8 K

Application Notes

Document	note
AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0)	PDF 804.11 K
MMIC Amplifier Biasing Procedure Application Note	PDF 435.1 K
Broadband Biasing of Amplifiers General Application Note	PDF 433.77 K
Thermal Management for Surface Mount Components General Application Note	PDF 189.99 K