HMC-ALH102-DIE Wideband Low Noise Amplifier Chip, 2 - 20 GHz
The HMC-ALH102 is a GaAs MMIC HEMT Low Noise Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 11.6 dB of gain at 10 GHz, <3.5 dB noise figure and +10 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +2V supply voltage. The HMC-ALH102 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size.
Applications
- Wideband Communications Receivers
- Surveillance Systems
- Point-to-Point Radios
- Point-to-Multi-Point Radios
- Military & Space
- Test Instrumentation
Features and BenefitsNoise Figure: <2.5 dBGain: 11.6 dB @ 10 GHzP1dB Output Power: +10 dBmSupply Voltage: +2V @ 55 mADie Size: 3.0 x 1.435 x 0.1 mm | S-Parameters |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC-ALH102 Production | CHIPS OR DIE | OTH 25 | 25C | 44.05 | 35.68 | Y |
| HMC-ALH102-SX Production | CHIPS OR DIE | OTH 2 | 25C | 0 | 0 | Y |
Reference Materials
