HMC-ALH508-DIE Low Noise Amplifier Chip, 71 - 86 GHz
The HMC-ALH508 is a three stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 71 and 86 GHz. The HMC-ALH508 features 13 dB of small signal gain, 4.5 dB of noise figure and an output power of +7 dBm at 1 dB compression from two supply voltages at 2.1V and 2.4V respectively. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.
This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
Applications
- Short Haul / High Capacity Links
- Wireless LANs
- Automotive Radar
- Military & Space
- E-Band Communication Systems
Features and BenefitsNoise Figure: <5 dBP1dB: +7 dBmGain: 13 dBSupply Voltage: +2.4V50 Ohm Matched Input / OutputDie Size: 3.2 x 1.6 x 0.1 mm | S-Parameters |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC-ALH508 Production | CHIPS OR DIE | OTH 10 | -55 to 85C | 231.35 | 187.39 | Y |
| HMC-ALH508-SX Production | CHIPS OR DIE | OTH 2 | -55 to 85C | 0 | 0 | Y |
