HMC-ALH509-DIE Low Noise Amplifier Chip, 71 - 86 GHz
The HMC-ALH509 is a three stage GaAs HEM T MMIC Low Noise Amplifier (LNA) which operates between 71 and 86 GHz. The HMC-ALH509 features 14 dB of small signal gain, 5 dB of noise figure and an output power of +7 dBm at 1dB compression from a +2V supply voltage. All bond pads and the die backside are Ti/Au metallized. This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
Applications
- Short Haul / High Capacity Links
- Automotive Radar
- E-Band Communication Systems
- Test & Measurement
Features and BenefitsNoise Figure: 5 dBP1dB: +7 dBmGain: 14 dBSupply Voltage: +2V50 Ohm Matched Input/OutputDie Size: 3.20 x 1.60 x 0.1 mm | S-Parameters |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC-ALH509 Production | CHIPS OR DIE | OTH 10 | -55 to 85C | 188.97 | 153.22 | Y |
| HMC-ALH509-SX Production | CHIPS OR DIE | OTH 2 | -55 to 85C | 0 | 0 | Y |
Reference Materials
