HMC-AUH312-DIE Wideband Amplifier Chip, 0.5 - 80 GHz
The HMC-AUH312 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), HEMT, low noise, wideband amplifier die that operates between 500 MHz and 80 GHz, providing a typical 3 dB bandwidth of 80 GHz. The amplifier provides 10 dB of small signal gain and a maximum output amplitude of 2.5 V p-p, which makes it ideal for use in broadband wireless, fiber optic communications, and test equipment applications.
The amplifier die occupies 1.2 mm × 1.0 mm, facilitating easy integration into a multichip module (MCM). The HMC-AUH312 can be used with or without a bias tee, and requires off-chip blocking components and bypass capacitors for the dc supply lines. Adjustable gate voltages allow for gain adjustment.
Applications
- Fiber optic modulator driver
- Fiber optic photoreceiver postamplifiers
- Low noise amplifier for test and measurement equipment
- Point to point and point to multipoint radios
- Wideband communication and surveillance systems
- Radar warning receivers
Features and BenefitsSmall signal gain: >8 dB80 GHz distributed amplifierConfigurable with or without bias tees for VDD and VGG1 biasLow power dissipation300 mW with bias tee at VDD = 5 V360 mW without bias tee at VDD = 6 V480 mW without bias tee at VDD = 8 VDie size: 1.2 mm × 1.0 mm × 0.1 mm | S-Parameters |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC-AUH312 Production | CHIPS OR DIE | OTH 10 | -55 to 85C | 186.36 | 150.95 | Y |
| HMC-AUH312-SX Production | CHIPS OR DIE | REEL 2 | -55 to 85C | 0 | 0 | Y |
Reference Materials
