HMC358 MMIC VCO SMT w/ Buffer Amp, 5.8 - 6.8 GHz

The HMC358MS8G(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC358MS8G(E) integrates resonators, negative resistance devices, varactor diodes, and buffer amplifiers. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is 11 dBm typical from a 3V supply voltage. The voltage controlled oscillator is packaged in a low cost, surface mount 8 lead MSOP package with an exposed base for improved RF and thermal performance.

Applications
  • UNII & Point-to-Point Radios
  • 802.11a & HiperLAN WLAN
  • VSAT Radios
Features and Benefits
  • Pout: +11 dBm
  • Phase Noise: -110 dBc/Hz @100 KHz
  • No External Resonator Needed
  • Single Supply: 3V @ 100 mA
  • 15 mm² MSOP8G SMT Package
RF & Microwave
Data Sheets
Documentnote
HMC358 Data SheetPDF 550.33 K
Order Information
Part NumberPackagePacking QtyTemp RangePrice 100-499Price 1000+RoHS
HMC358MS8GE Production8 ld MSOP_EPOTH 50-40 to 85C16.6913.52Y
HMC358MS8GETR Production8 ld MSOP_EPREEL 500-40 to 85C16.6913.52Y
Evaluation Boards
Part NumberDescriptionPriceRoHS
104713-HMC358MS8GEvaluation Board - HMC358MS8G Evaluation PCB347.13Y
Reference Materials
HMC358 Data Sheet hmc358
Semiconductor Qualification Test Report: GaAs HBT-A (QTR: 2013-00228) hmc587
Package/Assembly Qualification Test Report: MS8G (QTR: 2014-00393) hmc536ms8g
PCN: MS, QS, SOT, SOIC packages - Sn/Pb plating vendor change hmc536ms8g
HMC Legacy PCN: MS##, MS##E and MS##G,MS##GE packages - Relocation of... hmc536ms8g
MSOP 8 & 10 Tape Specification (MS8, MS8G, MS10, MS10G) hmc349ams8g