HMC3587 HBT Gain Block MMIC Amplifier, 4 - 10 GHz

The HMC3587LP3BE is a HBT Gain Block MMIC amplifier covering 4 GHz to 10 GHz and packaged in a 3x3 mm plastic QFN SMT package. This versatile amplifier can be used as a cascadable IF or RF gain stage in 50 Ohm applications. The HMC3587LP3BE delivers 14.5 dB gain, and +13 dBm output P1dB with only 3.5 dB noise figure.

Applications
  • Cellular / PCS / 3G
  • Fixed Wireless & WLAN
  • CATV, Cable Modem & DBS
  • Microwave Radio & Test Equipment
  • IF & RF Applications
Features and Benefits
  • High Output IP3: +25 dBm
  • Single Positive Supply: +5V
  • Low Noise Figure: 3.5 dB
  • 12 Lead 3x3 mm SMT Package:
    9 mm²
  • Amplifiers
    Data Sheets
    Documentnote
    HMC3587 Data SheetPDF 1.17 M
    Application Notes
    Documentnote
    AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0)PDF 804.11 K
    Order Information
    Part NumberPackagePacking QtyTemp RangePrice 100-499Price 1000+RoHS
    HMC3587LP3BE ProductionLFCSP:LEADFRM CHIP SCALEOTH 50-40 to 85C13.989.86Y
    HMC3587LP3BETR ProductionLFCSP:LEADFRM CHIP SCALEREEL 500-40 to 85C13.989.86Y
    Evaluation Boards
    Part NumberDescriptionPriceRoHS
    113589-HMC3587LP3BEvaluation Board - HMC3587LP3BE Evaluation Board302Y
    Reference Materials
    HMC3587 Data Sheet hmc3587
    AN-1363: 利用有源偏置控制器满足外部偏置射频/微波放大器的偏置要求 (Rev. 0) hmc8120
    AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0) hmc8120
    Semiconductor Qualification Test Report: GaAs HBT-A (QTR: 2013-00228) hmc587