HMC373 Low Noise Amplifier SMT w/Bypass, 0.7 - 1.0 GHz
The HMC373LP3(E) is a versatile, high dynamic range GaAs MMIC Low Noise Amplifier that integrates a low loss LNA bypass mode on the IC. The amplifier is ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz and provides 0.9 dB noise figure, 14 dB of gain and +35 dBm IP3 from a single supply of +5V @ 90 mA.
Input and output return losses are 28 and 12 dB respectively with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias. By presenting an open or short circuit to a single control line, the LNA can be switched into a low 2 dB loss bypass mode reducing the current consumption to 10 μA. For applications which require improved noise figure, please see the HMC668LP3(E).
Applications
- GSM, GPRS & EDGE
- CDMA & W-CDMA
- Private Land Mobile Radio
Features and BenefitsNoise Figure: 0.9 dBOutput IP3: +35 dBmGain: 14 dBLow Loss LNA Bypass PathSingle Supply: +5V @ 90 mA50 Ohm Matched Output | S-Parameters |
Data Sheets
Application Notes
Order Information
Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
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HMC373LP3E Production | 16 ld QFN (3x3mm w/1.7mm ep) | OTH 50 | -40 to 85C | 8.16 | 6.75 | Y |
HMC373LP3ETR Production | 16 ld QFN (3x3mm w/1.7mm ep) | REEL 500 | -40 to 85C | 8.16 | 6.75 | Y |
Evaluation Boards
Part Number | Description | Price | RoHS |
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107220-HMC373LP3 | Evaluation Board - HMC373LP3 Evaluation PCB | 259.77 | Y |
Reference Materials