HMC413 Power Amplifier SMT, 1.6 - 2.2 GHz
The HMC413QS16G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5V supply voltage. The amplifi er can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control.
Applications
- Cellular / PCS / 3G
- Portable & Infrastructure
- Wireless Local Loop
Features and BenefitsGain: 23 dBSaturated Power: +29.5 dBm 42% PAESupply Voltage: +2.75V to +5VPower Down CapabilityLow External Part Count | S-Parameters |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC413QS16GE Production | 16 ld QSOP_EP | OTH 50 | -40 to 85C | 6.18 | 5.01 | Y |
| HMC413QS16GETR Production | 16 ld QSOP_EP | REEL 500 | -40 to 85C | 6.18 | 5.01 | Y |
Evaluation Boards
| Part Number | Description | Price | RoHS |
|---|
| 105000-HMC413QS16G | Evaluation Board - HMC413QS16G Evaluation PCB | 347.13 | Y |
Reference Materials
