HMC606LC5 Wideband Low Phase Noise Amplifier SMT, 2 - 18 GHz

The HMC606LC5 is a GaAs InGaP HBT MMIC Distributed Amplifier housed in a leadless 5x5 mm suface mount package which operates between 2 and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra low phase noise performance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers. The HMC606LC5 provides 13.5 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output power at 1 dB gain compression while requiring 64 mA from a +5V supply. The HMC606LC5 amplifiers I/O's are internally matched to 50 Ohms and are internally DC blocked. Applications

Features and Benefits

Ultra Low Phase Noise:
-160 dBc/Hz @ 10 kHz

P1dB Output Power: +15 dBm

Gain: 13.5 dB

Output IP3: +27 dBm

Supply Voltage: +5V @ 64mA

50 Ohm Matched Input/Output

25mm² Leadless SMT Package

Amplifiers

Wideband Distributed Amplifiers

S-Parameters

HMC606LC5 S-Parameters .ZIP

Data Sheets

Document	note
HMC606LC5 Data Sheet	PDF 711.25 K

Application Notes

Document	note
AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0)	PDF 804.11 K
MMIC Amplifier Biasing Procedure Application Note	PDF 435.1 K
Broadband Biasing of Amplifiers General Application Note	PDF 433.77 K
Thermal Management for Surface Mount Components General Application Note	PDF 189.99 K

Order Information

Part Number	Package	Packing Qty	Temp Range	Price 100-499	Price 1000+	RoHS
HMC606LC5 Production	LCC:CER LEADLESS CHIP CARR	OTH 50	-55 to 85C	97.27	78.79	Y
HMC606LC5TR Production	LCC:CER LEADLESS CHIP CARR	REEL 100	-55 to 85C	97.27	78.79	Y
HMC606LC5TR-R5 Production	LCC:CER LEADLESS CHIP CARR	REEL 500	-55 to 85C	97.27	78.79	Y