HMC618A GaAs SMT pHEMT Low Noise Amplifier SMT, 1.2 - 2.2 GHz
The HMC618ALP3E is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.2 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618ALP3E shares the same package and pinout with the HMC617LP3E 0.55 - 1.2 GHz LNA. The HMC618ALP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618ALP3E offers improved noise figure versus the previously released HMC375LP3(E) and the HMC382LP3(E).
Applications
Features and BenefitsNoise Figure: 0.75 dBGain: 19 dBOutput IP3: 36 dBmSingle Supply: +3V to +5V50 Ohm Matched Input/Output16 Lead 3x3mm QFN Package: 9 mm² | |
Data Sheets
Application Notes
Order Information
Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
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HMC618ALP3E Production | 16 ld QFN (3x3mm w/1.7mm ep) | OTH 50 | -40 to 85C | 5.74 | 3.28 | Y |
HMC618ALP3ETR Production | 16 ld QFN (3x3mm w/1.7mm ep) | REEL 500 | -40 to 85C | 5.74 | 3.28 | Y |
Evaluation Boards
Part Number | Description | Price | RoHS |
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EV1HMC618ALP3 | Evaluation Board | 227 | Y |
EV2HMC618ALP3 | Evaluation Board | 227 | Y |
Reference Materials