HMC8401-DIE DC to 28 GHz, GaAs pHEMT MMIC Low Noise Amplifier
The HMC8401 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). The HMC8401 is a wideband low noise amplifier which operates between dc and 28 GHz. The amplifier provides 14.5 dB of gain, 1.5 dB noise figure, 26 dBm output IP3 and 16.5 dBm of output power at 1 dB gain compression while requiring 60 mA from a 7.5 V supply. The HMC8401 also has a gain control option, VGG2. The HMC8401 amplifier input/ outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Applications
- Test instrumentation
- Microwave radios and very small aperture terminals (VSATs)
- Military and space
- Telecommunications infrastructure
- Fiber optics
Features and BenefitsOutput power for 1 dB compression (P1dB): 16.5 dBm typicalSaturated output power (PSAT): 19 dBm typicalGain: 14.5 dB typicalNoise figure: 1.5 dBOutput third-order intercept (IP3): 26 dBm typicalSupply voltage: 7.5 V at 60 mA50 Ω matched input/outputDie size: 2.55 mm × 1.5 mm × 0.05 mm | Simulink Models |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC8401 Production | CHIPS OR DIE | OTH 25 | -55 to 85C | 110.05 | 102.96 | Y |
| HMC8401-SX Production | CHIPS OR DIE | OTH 0 | -55 to 85C | 0 | 0 | Y |
