HMC8402-DIE 2 GHz to 30 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier
The HMC8402 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier which operates between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of gain, 2 dB noise figure, 26 dBm output IP3, and 21.5 dBm of output power at 1 dB gain compression while requiring 68 mA from a 7 V supply. The HMC8402 is self biased with only a single positive supply needed to achieve a drain current IDQ of 68 mA.
The HMC8402 amplifier input/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Applications
- Test instrumentation
- Microwave radios and very small aperture terminals (VSATs)
- Military and space
- Telecommunications infrastructure
- Fiber optics
Features and BenefitsOutput power for 1 dB compression (P1dB): 21.5 dBm typicalSaturated output power (PSAT): 22 dBm typicalGain: 13.5 dB typicalNoise figure: 2 dBOutput third-order intercept (IP3): 26 dBm typicalSupply voltage: 7 V at 68 mA50 Ω matched input/outputDie size: 2.7 mm × 1.35 mm × 0.05 mm | S-Parameters |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC8402 Production | CHIPS OR DIE | OTH 25 | -55 to 85C | 114.67 | 107.29 | Y |
| HMC8402-SX Production | CHIPS OR DIE | OTH 2 | -55 to 85C | 0 | 0 | Y |
