BS270: N-Channel Enhancement Mode Field Effect Transistor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 500 mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
- 400 mA, 60 V. RDS(ON) = 2 Ω @ VGS = 10 V.
- High density cell design for extremely low RDS(ON).
- Voltage controlled small signal switch.
- Rugged and reliable.
- High saturation current capability.
Ordering CodeProduct | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
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BS270 | Full Production
ROHS Compliant as of 27-Feb-2006
China RoHS | $0.038 | TO-92 3L
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4.19 x 5.2 x 20.95mm,
BULK | Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code)
Line 2BS270
|
BS270_D74Z | Full Production
ROHS Compliant as of 27-Feb-2006
China RoHS | $0.038 | TO-92 3L
-
4.19 x 5.2 x 21.77mm,
AMMO | Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code)
Line 2BS270
|
Application Notes
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